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6.12  References

Page numbers in brackets after a reference indicate its location in the chapter body.

[JEDEC I/O] [ reference location ] In numerical (not chronological) order the relevant JEDEC standards for I/O are:

JESD8-A. Interface Standard for Nominal 3 V/3.3 V Supply Digital Integrated Circuits (June 1994). This standard replaces JEDEC Standards 8, 8-1, and 8-1-A and defines the DC interface parameters for digital circuits operating from a power supply of nominal 3 V/3.3 V.

JESD8-2. Standard for Operating Voltages and Interface Levels for Low Voltage Emitter-Coupled Logic (ECL) Integrated Circuits (March 1993). Describes 300K ECL (voltage and temperature compensated, with threshold levels compatible with 100K ECL).

JESD8-3. Gunning Transceiver Logic (GTL) Low-Level, High-Speed Interface Standard for Digital Integrated Circuits (Nov. 1993). Defines the DC input and output specifications for a low-level, high-speed interface for integrated circuits.

JESD8-4. Center-Tap-Terminated (CTT) Low-Level, High-Speed Interface Standard for Digital Integrated Circuits (Nov. 1993). Defines the DC I/O specifications for a low-level, high-speed interface for integrated circuits that can be a superset of LVCMOS and LVTTL.

JESD8-5. 2.5 V +/– 0.2 V (Normal Range), and 1.8 V–2.7 V (Wide Range) Power Supply Voltage and Interface Standard for Nonterminated Digital Integrated Circuit (Oct. 1995). Defines power supply voltage ranges, DC interface parameters for a high-speed, low-voltage family of nonterminated digital circuits.

JESD8-6. High Speed Transceiver Logic (HSTL): A 1.5 V Output Buffer Supply Voltage Based Interface Standard for Digital Integrated Circuits (Aug. 1995). Describes a 1.5 V high-performance CMOS interface suitable for high I/O count CMOS and BiCMOS devices operating at over 200 MHz.

JESD12-6. Interface Standard for Semicustom Integrated Circuits (March 1991). Defines logic interface levels for CMOS, TTL, and ECL inputs and outputs for 5 V operation.

[JEDEC ESD, ANSI/IEEE ESD] The JEDEC and IEEE standards for ESD are:

JESD22-C101. Field Induced Charged Device Model Test Method for Electrostatic Discharge Withstand Thresholds of Microelectronic Components (May 1995). Describes Charged Device Model that simulates charging/discharging events that occur in production equipment and processes. Potential for CDM ESD events occur with metal-to-metal contact in manufacturing.

ANSI/EOS/ESD S5.1-1993. Electrostatic Discharge (ESD) Sensitivity Testing, Human Body Model (HBM), Component Level.

ANSI/IEEE C62.47-1992. Guide on Electrostatic Discharge (ESD): Characterization of the ESD Environment.

ANSI/IEEE 1181-1991. Latchup Test Methods for CMOS and BiCMOS Integrated Circuit Process Characterization.

PCI Local Bus Specification, Revision 2.1, June 1, 1995. Available from PCI Special Interest Group, PO Box 14070, Portland OR 97214. (800) 433-5177 (U.S.), (503)797-4207 (International). 282 p. Detailed description of the electrical and mechanical requirements for the PCI Bus written for engineers who already understand the basic operation of the bus protocol. [ reference location ]

Wakerly, J. F. 1994. Digital Design: Principles and Practices. 2nd ed. Englewood Cliffs, NJ: Prentice-Hall, 840 p. ISBN 0-13-211459-3. TK7874.65.W34. [ reference location ]


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