Freescale RF Technology Breaks the 1 kW Barrier with 50V RF Power LDMOS

MUNICH, Germany—(BUSINESS WIRE)—October 16, 2007— Freescale Semiconductor has expanded its portfolio of 50V LDMOS RF power transistors with three devices that set new standards for efficiency, gain, and thermal resistance when compared to competing bipolar and MOSFET devices.

The devices deliver extraordinary performance levels that can help systems designers create ultra-high resolution MRI machines and dramatically smaller and more powerful broadcast equipment. They also can also help reduce part counts by 70 percent for pulsed systems such as advanced weather radars and high power industrial lasers.

The product introduction provides competitive advantages for Freescale's industrial customers, while creating entirely new RF power opportunities for the company in pulsed applications and broadcast, scientific, medical and radar markets.

Delivering peak RF output power of 1 kW, the MRF6VP21KH and MRF6VP41KH devices are intended for broadcast, public safety and pulsed applications. The MRF6VP2600H device delivers peak RF output power of 600 W continuous wave (CW) and is intended for industrial, scientific and broadcast applications.

The new devices are based on Freescale's sixth-generation, high-voltage (VHV6) 50V LDMOS technology - the first 50V LDMOS technology ever introduced for broadcast, industrial, scientific and medical markets.

"Requirements for RF power devices are quite stringent in broadcast and industrial markets, where efficiency, ruggedness and reliability are critical," said Gavin P. Woods, vice president and general manager of Freescale Semiconductor's RF Division. "Our 50V VHV6 LDMOS devices have a solid track record of meeting these challenges, while delivering industry leading power and performance metrics."

Two of the devices are optimal for pulsed operation and the third can be used for both CW and pulsed operation. Key specifications for the three devices are:

-- MRF6VP21KH: 10 to 235 MHz frequency range, 1 kW peak output power (at 225 MHz, 100 microseconds pulse width, 20% duty cycle), 24 dB gain, 67.5% efficiency, and low thermal resistance under pulsed conditions. Typical applications include digital VHF television transmitters as well as HF and VHF communications systems.

-- MRF6VP41KH: 10 to 450 MHz frequency range, 1 kW peak output power (at 450 MHz, 100 microseconds pulse width, 20% duty cycle), 20.5 dB gain, 64% efficiency, and low thermal resistance under pulsed conditions. Typical applications include radar and public safety communications systems.

-- MRF6VP2600H: 10 to 250 MHz frequency range, 600 W CW P1dB output power (at 225 MHz), 125 W output power in typical OFDM DVBT (Direct Video Broadcast-Terrestrial) TV service, 25.8 dB gain, 29% efficiency, ACPR at 4 MHz offset of -61 dBc. Typical applications include FM broadcast transmitters, analog and digital VHF television transmitters and industrial systems.

All three devices are designed in air-cavity packaging and are RoHS compliant. Available in a bolt down option, the MRF6VP41KHS is also the first RF power transistor at this power level to be available in a push-pull solder down mounting optimized package (the NI-1230S). The push-pull solder down mounting option presents a smaller footprint than traditional air-cavity packages and combines low manufacturing cost and high reliability. The package is RoHS compliant and is also compatible for use with lead-based solder.

VHV6: a step up in performance

Commercialized for the first time by Freescale, the 50V VHV6 LDMOS platform demonstrates industry leading gain and efficiency. When combined with innovations in device packaging and thermal management, VHV6 helps reduce device count and lower system costs via increases in rated power per transistor.

Like other devices in Freescale's 50V LDMOS family, these new devices also incorporate electrostatic-discharge (ESD) protection, making them much less susceptible to electrostatic events on assembly sites. This ESD protection enables a wide gate voltage swing capability of -6 V and +10 V, which is advantageous when the devices are operating in higher classes of operation such as Class C.


The MRF6VP21KH, MRF6VP41KH, and MRF6VP2600H are sampling now and full production is expected in December 2007. Reference text fixtures are available for all three devices. Large-signal models are expected to be available for the devices in early 2008. For specific sampling and pricing information, please contact Freescale Semiconductor, a local Freescale sales office, or an authorized distributor.

Freescale industrial solutions

Freescale delivers system-level solutions for the environmental, longevity and energy-efficiency requirements of connected industrial applications. With more than four decades of industrial experience, Freescale products are used in motor control, factory automation, building security, HVAC, medical, robotics, aerospace and defense markets. Freescale offers industrial designers 8-bit and ColdFire(R) microcontrollers, PowerQUICC processors, i.MX application processors, ZigBee(R)-compliant solutions, RF power transistors, sensors, analog and power management ICs, and digital signal controllers.

About Freescale Semiconductor

Freescale Semiconductor is a global leader in the design and manufacture of embedded semiconductors for the automotive, consumer, industrial, networking and wireless markets. The privately held company is based in Austin, Texas, and has design, research and development, manufacturing or sales operations in more than 30 countries. Freescale is one of the world's largest semiconductor companies with 2006 sales of $6.4 billion (USD).

Freescale(TM) and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. (C) Freescale Semiconductor, Inc. 2007.


Freescale Semiconductor
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Review Article
  • October 09, 2008
    Reviewed by 'Don Winn'
    Nice on-line prestation and Very informative. These new 50 volt LDMOS devices should be easy to tame making a stable KW RF source.

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