Metrology, Inspection, and Process Control in VLSI Manufacturing

DUBLIN, April 11, 2014 — (PRNewswire) —

Dublin - Research and Markets ( http://www.researchandmarkets.com/research/gr7z43/metrology) has announced the addition of the "Metrology, Inspection, and Process Control in VLSI Manufacturing" report to their offering.

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The increase in complexity of semiconductors and the resulting increase in the complexity and cost of the semiconductor manufacturing process has been a driver of demand for metrology systems.

This report offers a complete analysis of the Process Control market, segmented as: Lithography Metrology; Wafer Inspection/Defect Review; Thin Film Metrology; and Other Process Control Systems. Each of these sectors is further segmented.

Market shares of competitors for all segment is presented.


Key Topics Covered:

Chapter 1 Introduction

Chapter 2 Executive Summary

Chapter 3 Metrology/Inspection Technologies
3.1 Introduction
3.2 Imaging Techniques
3.2.1 Scanning Electron Microscope (SEM)
3.2.2 Transmission Electron Microscope (TEM)
3.3 Scanning Probe Microscopes
3.3.1 Atomic Force Microscopy (AFM)
3.3.2 Scanning Tunneling Microscopy (STM)
3.3.3 Scanning Probe Microscopy (SPM)
3.3.4 AFM Types
3.3.4.1 Contact AFM
3.3.4.2 Dynamic Force Mode AFM Techniques
3.3.5 Scanning Surface Potential Microscopy (SSPM)
3.4 Optical Techniques
3.4.1 Scatterometry
3.4.1.1 Ellipsometry
3.4.1.2 Reflectometry
3.4.1.3 Scatterometry Developments
3.4.2 Total Reflection X-Ray Fluorescence (TXRF)
3.4.3 Energy Dispersive X-Ray Analysis (EDX)
3.4.4 Secondary Ion Mass Spectrometry (SIMS)
3.4.4.1 Surface Imaging Using SIMS
3.4.4.2 SIMS Depth Profiling
3.4.5 Auger Electron Spectroscopy
3.4.6 Focused Ion Beam (FIB)
3.4.7 X-Ray Reflectometry (XRR)
3.4.8 X-Ray Photoelectron Spectroscopy (XPS)
3.4.9 Rutherford Backscattering (RBS)
3.4.10 Optical Acoustics Metrology
3.4.11 Fourier Transform Infrared Spectroscopy (FTIR)
3.4.12 Thermally-Induced Voltage Alteration (TIVA)
3.5 Film Thickness And Roughness
3.5.1 Surface Inspection Technology
3.5.2 Dimensional Technology
3.5.3 Stylus Profilometer

Chapter 4 Defect Review/Wafer Inspection
4.1 Introduction
4.2 Defect Review
4.2.1 SEM Defect Review
4.2.2 Optical Defect Review
4.2.3 Other Defect Review
4.3 Patterned Wafer Inspection
4.3.1 E-Beam Patterned Wafer Inspection
4.3.2 Optical Patterned Wafer Inspection
4.4 Unpatterned Wafer Inspection
4.5 Macro-Defect Inspection

Chapter 5 Thin Film Metrology
5.1 Introduction
5.1.1 Front End Applications
5.1.2 Back End Applications
5.2 Metal Thin-Film Metrology
5.3 Non-Metal Thin-Film Metrology
5.4 Substrate/Other Thin Film Metrology

Chapter 6 Lithography Metrology
6.1 Overlay
6.2 CD
6.3 Mask (Reticle) Metrology/Inspection

Chapter 7 Market Forecast
7.1 Introduction
7.2 Market Forecast Assumptions
7.3 Market Forecast

Chapter 8 Integrated/In-Situ Metrology/Inspection Trends
8.1 Introduction
8.2 In-Situ Metrology
8.3 Integrated Metrology
8.3.1 Benefits
8.3.2 Limitations

Chapter 9 Key Drivers
9.1 300mm/450mm Wafers
9.2 Copper Metrology
9.3 Low-K Dielectrics
9.4 Chemical Mechanical Planarization (CMP)
9.5 Ion Implant

For more information visit http://www.researchandmarkets.com/research/gr7z43/metrology


Media Contact: Laura Wood , +353-1-481-1716, Email Contact

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